An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light-matter interaction associated with dual coupling
An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light-matter interaction associated with dual coupling
复制标题
块状硅衬底上具有Ge量子点的SiGe纳米盘阵列展示了与双耦合相关的独特光-物质相互作用
DOI：
10.1039/c9nr00798a
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发表时间：
2019-09-07
期刊：
影响因子：
6.7
通讯作者：
Zhong, Zhenyang
中科院分区：
文献类型：
--
作者：
Zhang, Ningning;Wang, Shuguang;Zhong, Zhenyang
带有Ge量子点（QD）的硅基微盘因其作为单片光电集成电路（MOEIC）所需光源以及在腔量子电动力学（CQED）研究中的潜力而引起了极大的兴趣。在这里，我们报告了直接在块状硅衬底上实现的具有嵌入式Ge量子点的独特SiGe纳米盘阵列。尽管纳米盘的尺寸远小于腔模的波长，但由于量子点发射和纳米盘的腔模之间的耦合，其光致发光显着增强，从而证明了其优越的光电特性。此外，由于纳米盘之间的交替耦合，观察到腔模式的光谱位移和与纳米盘阵列中量子点的同相发射的干扰相关的强度调制。混合模式源自单个纳米盘的变极模式和周期性纳米盘的引导模式之间的光谱重叠，即使在室温下也会产生强烈的发光。我们的结果为嵌入式 QD 纳米盘阵列中 CQED 的基本物理原理提供了新的线索。鉴于其优越的光电特性、载流子注入和通过硅基座散热的可行性，所提出的带有嵌入式Ge量子点的SiGe纳米盘将在创新光电器件中具有巨大的应用潜力，特别是作为MOEIC的光源。
Si-Based microdisks with Ge quantum dots (QDs) have been of great interest due to their potential as the desired light source for monolithic optical-electronic integrated circuits (MOEICs), as well as in the studies of cavity quantum electrodynamics (CQED). Here, we report on unique SiGe nanodisk arrays with embedded Ge QDs directly realized on bulk Si substrates. Their superior optoelectronic properties are demonstrated by remarkably enhanced photoluminescence due to the coupling between QD emissions and cavity modes of the nanodisk, even though the size of the nanodisk is much smaller than the wavelengths of cavity modes. Moreover, spectral shifts of cavity modes and an intensity modulation related to the interference of in-phase emissions from QDs in the nanodisk array are observed due to alternative coupling between nanodisks. A hybridized mode, originating from the spectral overlap between the anapole mode of individual nanodisks and the guided mode of periodic nanodisks, results in strong luminescence even at room temperature. Our results shed new light on the fundamental physics of CQED in nanodisk arrays with embedded QDs. Given their superior optoelectronic properties, the feasibility of carrier injection and thermal dissipation through the Si pedestal, the presented SiGe nanodisks with embedded Ge QDs will have great potential for application in innovative optoelectronic devices, particularly as the light source for MOEICs.