A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz
A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz
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DOI：
10.1109/emicc.2006.282753
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发表时间：
2006-09
期刊：
影响因子：
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通讯作者：
N. Ui;S. Sano
中科院分区：
文献类型：
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作者：
N. Ui;S. Sano
研制了一种用于大功率、高效率放大器的100 W E类GaN HEMT器件。在简单的E类电路拓扑结构下，在2.14GHz和50 V漏偏置工作条件下，获得了良好的上级测量结果：漏极效率为75%，连续输出功率为100 W，相关功率增益为12 dB，具有可接受的频带特性
A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology