Buffer-ring-based all-digital on-chip monitor for PMOS and NMOS process variability and aging effects
Buffer-ring-based all-digital on-chip monitor for PMOS and NMOS process variability and aging effects
复制标题
基于缓冲环的全数字片上监视器，用于监测 PMOS 和 NMOS 工艺变异性和老化影响
DOI：
10.1109/ddecs.2010.5491792
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
K. Asada
中科院分区：
文献类型：
--
作者：
T. Iizuka;T. Nakura;K. Asada
在本文中，我们提出了一种全数字过程变异性和老化监视器，它利用带有脉冲计数器的简单缓冲环。所提出的电路根据在缓冲环上传播的单个脉冲的计数以及脉冲消失后的固定逻辑电平来监视过程变化。将所提出的电路与监控其振荡周期的简单环形振荡器结合使用，我们可以计算上升和下降延迟值，并可以独立监控 PMOS 和 NMOS 器件的变化。 65nm CMOS工艺上的电路仿真实验结果表明了所提出的监控电路的可行性。所提出的监测技术不仅适用于片上工艺变异性监测，还适用于老化效应的内场监测，例如负偏置不稳定性（NBTI）和通道热载流子（CHC）。
In this paper, we propose an all-digital process variability and aging monitor which utilizes a simple buffer ring with a pulse counter. The proposed circuit monitors the process variability according to a count number of a single pulse which propagates on the buffer ring and a fixed logic level after the pulse vanishes. Using the proposed circuit in combination with a simple ring oscillator which monitors its oscillation period, we can calculate the rise and fall delay values and can monitors the variabilities of PMOS and NMOS devices independently. The experimental results of the circuit simulation on 65nm CMOS process indicate the feasibility of the proposed monitoring circuit. The proposed monitoring technique is suitable not only for the on-chip process variability monitoring but also for the infield monitoring of aging effects such as negative bias instability (NBTI) and channel hot carrier (CHC).