Reversible Control of Co Magnetism by Voltage-Induced Oxidation
Reversible Control of Co Magnetism by Voltage-Induced Oxidation
复制标题
DOI：
10.1103/physrevlett.113.267202
复制
发表时间：
2014-12-30
影响因子：
8.6
通讯作者：
Wang, W. G.
中科院分区：
文献类型：
--
作者：
Bi, Chong;Liu, Yaohua;Wang, W. G.
我们表明，相邻的Gd_2O_3栅氧化层的Co_2Co薄膜的磁性能可以直接操纵电压。Co膜可以从具有强垂直磁各向异性的最佳氧化状态可逆地改变为具有面内磁各向异性的金属状态或具有接近零磁化的氧化状态，这取决于所施加电场的极性和持续时间。因此，使用仅几伏的栅极电压以非易失性方式实现了高达0.73erg/cm（2）的磁各向异性能的空前大的变化。这些结果为在自旋电子器件中实现超低能磁化操纵开辟了一条新的途径。
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.