Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis
Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis
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DOI：
10.1016/j.microrel.2013.06.015
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发表时间：
2013-12-01
影响因子：
1.6
通讯作者：
Chuang, Hao-Wei
中科院分区：
文献类型：
--
作者：
Chiu, Hsien-Chin;Chen, Chao-Hung;Chuang, Hao-Wei
AlGaN/GaN HEMT 中的传统干法蚀刻隔离工艺导致栅极金属接触台面侧壁区域，形成寄生栅极泄漏路径。在本文中，我们利用离子注入（I/I）隔离技术来抑制台面侧壁的栅极漏电流，以提高栅漏击穿电压，从而降低界面陷阱密度。根据电容-电压(C-V)测量曲线，I/I隔离样品的滞后电压为9.3 mV，界面态密度为5.26 x 10(12) cm(-2)。特别研究了 1/f 噪声现象和肖特基特性，以指示对半导体表面敏感的器件线性度。由于消除了侧壁等离子体引起的损伤，因此可以减少导致栅极界面附近自由载流子的俘获/去俘获的波动。 I/I 隔离 HEMT 减少的直流和闪烁噪声变化有利于高功率晶体管应用。 (C) 2013 Elsevier Ltd. 保留所有权利。
The traditional dry etching isolation process in AlGaN/GaN HEMTs causes the gate metal to contact the mesa sidewalls region, forming a parasitic gate leakage path. In this paper, we suppress the gate leakage current from the mesa-sidewall to increase the gate-to-drain breakdown voltage and thereby reduce the interface trap density by using the ion implantation (I/I) isolation technology. According to the capacitance-voltage (C-V) measured curve, the hysteresis voltage was 9.3 mV and the interface state density was 5.26 x 10(12) cm(-2) for the I/I isolation sample. The 1/f noise phenomena and Schottky characteristics are particularly studied to indicate device linearity, which is sensitive to the semiconductor surface. The fluctuation that causes trapping/detrapping of free carriers near the gate interface can be reduced because side-wall plasma-induced damages were eliminated. The reduced DC and flicker noise variation of I/I isolation HEMTs is beneficial for high power transistor applications. (C) 2013 Elsevier Ltd. All rights reserved.