High cluster formation tendency in Co implanted ZnO
High cluster formation tendency in Co implanted ZnO
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DOI：
10.1063/1.2955717
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发表时间：
2008-07
影响因子：
3.2
通讯作者：
K. Potzger;K. Kuepper;Qingyu Xu;Shengqiang Zhou;H. Schmidt;M. Helm;J. Fassbender
中科院分区：
文献类型：
--
作者：
K. Potzger;K. Kuepper;Qingyu Xu;Shengqiang Zhou;H. Schmidt;M. Helm;J. Fassbender
ZnO（0001）单晶的最大掺杂量为5 at。%的Co在低温下。虽然植入晶体不表现出铁磁性，但植入后退火导致植入的Co离子转变为小的金属团簇，在磁化反转时产生明显的滞后。分散的Co离子呈2+氧化态。在低温下可以观察到正磁阻。
ZnO(0001) single crystals have been implant doped with a maximum of 5 at. % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, postimplantation annealing leads to the transformation of the implanted Co ions into small metallic clusters giving rise to a pronounced hysteresis upon magnetization reversal. The dispersed Co ions are in 2+ oxidation state. Positive magnetoresistance could be observed at low temperatures.