New approach for fabricating submicron scale intrinsic Josephson junctions using high-Tc superconducting materials
New approach for fabricating submicron scale intrinsic Josephson junctions using high-Tc superconducting materials
复制标题
使用高温超导材料制造亚微米级本征约瑟夫森结的新方法
DOI：
10.1016/s0921-4534(01)00662-1
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发表时间：
2001
影响因子：
1.7
通讯作者：
S. Kishida
中科院分区：
文献类型：
--
作者：
S. Kim;Y. Latyshev;T. Yamashita;S. Kishida
我们报道了用800 nm厚度的c轴YBCO薄膜和bi2sr2cacu2o8 + d （Bi-2212）单晶晶须成功制备亚微米尺寸的本态约瑟夫森结（IJJs）。采用三维聚焦离子束刻蚀法制备了ijs层叠。首先，通过法向蚀刻在所需的结区域上制作微桥。通过将样品台倾斜至90度，根据所需的结尺寸从横向蚀刻桥上的两个凹槽。57-K-YBCO结的临界电流密度（J c）没有下降到0.5 μm²的面内面积，并表现出从零电压状态到电阻状态的集体开关转换的电流-电压（IV）特性。对于小于1 μm 2的Bi-2212堆叠，我们确定了充电对IV特性的一些影响。
We report successful fabrication of submicron size intrinsic Josephson junctions (IJJs) using c-axis YBCO thin films of 800 nm thickness and Bi 2 Sr 2 CaCu 2 O 8+ d (Bi-2212) single crystal whiskers. The stacks of IJJs were fabricated by 3D focused-ion-beam etching method. First a microbridge was patterned in a required junction area by the normal direction etching. By tilting of the sample stage up to 90, two grooves on the bridge were etched from lateral direction in accordance to the required junction size. The 57-K-YBCO junctions did not show any degradation of critical current density (J c) down to in-plane area of 0.5 μm 2 and show the current-voltage (IV) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 μm 2, we identified some features of the charging effects on the IV characteristics.