Nanoforest of black silicon fabricated by AIC and RIE method
Nanoforest of black silicon fabricated by AIC and RIE method
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DOI：
10.1016/j.matlet.2015.11.062
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发表时间：
2016-02
影响因子：
3
通讯作者：
Qiu-lin Tan;Licheng Tang;H. Mao;Chen Yuanjing;Yaohui Ren;Cheng Lei;F. Yuan;W. Ou;J. Xiong
中科院分区：
文献类型：
--
作者：
Qiu-lin Tan;Licheng Tang;H. Mao;Chen Yuanjing;Yaohui Ren;Cheng Lei;F. Yuan;W. Ou;J. Xiong
采用铝诱导晶化（AIC）和反应离子刻蚀（RIE）相结合的方法制备了黑硅纳米森林。在AIC期间，形成了一个粗糙的层，将AlSix金属间化合物。该层用作RIE步骤的蚀刻掩模。进行X射线光电子能谱（XPS）测量以进一步分析黑硅的形成。与Si3N4和多晶硅相比，黑硅分别对约3至5 μm和8至14 μm的波长表现出高度的红外吸收。此外，覆盖在黑硅基底上的黑铂进一步提高了红外吸收。这种黑硅的纳米结构森林可以被纳入气体检测器，光伏器件和成像应用的制造过程中，以改善红外吸收特性。
A nanoforest of black silicon was prepared using a method combining aluminum-induced crystallization (AIC) and reactive-ion etching (RIE). During the AIC period, a rough layer, incorporating AlSix intermetallics, was formed. This layer acted as an etch mask for the RIE step. X-ray photoelectron spectroscopic (XPS) measurements were performed to further analyze the formation of black silicon. Compared to Si3N4and polysilicon, the black silicon exhibits a high degree of infrared absorption for wavelengths of about 3 to 5 μm and 8 to 14 μm, respectively. In addition, black platinum overlaid on the base of black silicon further improves the infrared absorption. This nanostructure forests of black silicon could be incorporated into the fabrication process for gas detectors, photovoltaic devices, and imaging applications to improve the infrared absorption characteristics.