Effect of Nanowire Number, Diameter, and Doping Density on Nano-FET Biosensor Sensitivity
Effect of Nanowire Number, Diameter, and Doping Density on Nano-FET Biosensor Sensitivity
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DOI：
10.1021/nn202182p
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发表时间：
2011-08-01
期刊：
影响因子：
17.1
通讯作者：
Sun, Yu
中科院分区：
文献类型：
--
作者：
Li, Jason;Zhang, Yanliang;Sun, Yu
基于半导体纳米晶的生物传感器能够对生物分子进行无标记检测。纳米场效应晶体管生物传感器展出。已经证明了对蛋白质、核酸和病毒的高灵敏度。合理的器件设计方法，特别是那些基于理论预测，报告。然而，很少有实验研究探讨纳米线的影响。直径、掺杂密度和数目对纳米FET灵敏度的影响。在这项研究中，我们设计了一种基于并行方法和基于纳米操纵的后处理的制造工艺，用于构建具有仔细控制的纳米线参数（直径，掺杂密度和数量）的纳米FET生物传感器器件。我们通过实验揭示了这些纳米线参数对纳米FET生物传感器灵敏度的影响。实验结果定量地表明，器件的灵敏度随着纳米线数目的增加而降低（与单纳米线器件相比，4和7纳米线器件表现出类似于38%和类似于82%的灵敏度降低），更大的纳米线直径（具有81-100和101-120 nm纳米线直径的传感器表现出与16相似和与37%相似的特性。与纳米线直径为60-80 μ m的器件相比，灵敏度降低），以及更高的纳米线掺杂密度（类似于由于纳米线掺杂密度从10（17）个原子增加到10（19）个原子，灵敏度降低69%）。cm（-3））。这些结果提供了深入了解控制纳米线特性的重要性，以最大限度地提高灵敏度和最小化设计时跨器件的性能变化。制造纳米FET生物传感器。
Semiconductive nanowire-based biosensors are capable of label-free detection of biological molecules. Nano-FET (field-effect transistor) biosensors exhibiting. high sensitivities toward proteins, nucleic acids, and viruses have been demonstrated. Rational device design methodologies, particularly those based on theoretical predictions, were reported. However, few experimental studies have Investigated the effect of nanowire. diameter, doping density, and number on nano-FET sensitivity. In this study, we devised a fabrication process based on parallel approaches and nanomanipulation-based post-processing for constructing nano-FET biosensor devices with carefully controlled nanowire parameters (diameter, doping density, and number). We experimentally reveal the effect of these nanowire parameters on nano-FET biosensor sensitivity. The experimental findings quantitatively demonstrate that device sensitivity decreases with increasing number of nanowires (4 and 7 nanowire devices exhibited a similar to 38 and similar to 82% decrease in sensitivity as compared to a single-nanowire device), larger nanowire diameters (sensors with 81-100 and 101-120 nm nanowire diameters exhibited a similar to 16 and similar to 37% decrease in sensitivity compared to devices with nanowire diameters of 60-80 nin), and higher nanowire doping densities (similar to 69% decrease:in sensitivity due to an increase In nanowire doping density from 10(17) to 10(19) atoms . cm(-3)). These results provide insight into the importance of controlling nanowire properties for maximizing sensitivity and minimizing performance variation across devices when designing and. manufacturing nano-FET blosensors.