Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum
Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum
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DOI：
10.1002/adfm.201301468
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发表时间：
2013-12-23
影响因子：
19
通讯作者：
Kondo, Michio
中科院分区：
文献类型：
--
作者：
Svrcek, Vladimir;Dohnalova, Katerina;Kondo, Michio
报道了利用常压微等离子体三维表面工程技术大幅度提高无表面活性剂纳米硅(Si-NCS)的绝对光致发光量子产率(QY)。利用瞬时诱导吸收和光致发光QY研究了表面特性对载流子倍增机制的影响。表面工程使太阳辐射的一个重要光谱范围(2.3-3 eV)内的绝对QY增加了120多倍(从0.1%增加到12%)。在常温乙醇中放置3个月后，Si-NCS QY是稳定的。
Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3-3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.