Electron states in narrow gate-induced channels in Si
Electron states in narrow gate-induced channels in Si
复制标题
Si 中窄栅诱导沟道中的电子态
DOI：
10.1063/1.97361
复制
发表时间：
1986
影响因子：
4
通讯作者：
F. Stern
中科院分区：
文献类型：
--
作者：
S. Laux;F. Stern
在具有内外栅极的金属-氧化物-硅结构中，得到了窄栅下或窄缝下电子态的泊松方程和薛定谔方程的自一致数值解。对于所考虑的情况（30 nm宽栅极和80 nm宽狭缝），平行于Si - SiO2界面的运动状态比垂直于界面的运动状态间隔更近。对于所考虑的结构，应该有可能实现电子密度≤106 cm−1的动态一维系统。
Self‐consistent numerical solutions of the Poisson and Schrodinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal‐oxide‐silicon structure with an inner and an outer gate. For the cases considered (30‐nm‐wide gate and 80‐nm‐wide slit), the states of motion parallel to the Si‐SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one‐dimensional system with an electron density ≲106 cm−1.