On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film
On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film
复制标题
DOI：
10.1063/1.4942427
复制
发表时间：
2016-02-01
期刊：
影响因子：
1.6
通讯作者：
Hiramoto, Toshiro
中科院分区：
文献类型：
--
作者：
Kobayashi, Masaharu;Hiramoto, Toshiro
物联网（IoT）技术需要一种新型的节能晶体管，这种晶体管可以在超低电压和超低功耗下工作，用于采用能量收集技术作为电源的传感器节点设备。本文以完全兼容互补金属氧化物半导体（CMOS）工艺技术的铁电HfO2栅极绝缘子为例，从运行速度、材料要求和能效等方面，研究了一种在低于0.2 v电源电压下工作的斜率负电容场效应晶体管（ncfet）的实用器件设计准则。利用实验HfO2材料参数，建立了基于物理的ncfet数值模拟器，同时对铁电栅绝缘体和FET沟道进行建模。仿真结果表明，采用铁电HfO2栅极绝缘子的ncfet通过设置合适的工作点，在几nm厚的栅极绝缘子上实现了无磁滞的工作。结果表明，当铁电栅绝缘子的自发极化有限响应时间为10-100psec时，可以实现1-10MHz的工作速度，且迟滞可以忽略不计。最后，通过优化材料参数和调整负电容，NCFET可以实现比传统mosfet高2.5倍的能量效率。因此，NCFET有望成为超低功耗物联网的新型CMOS技术平台。(C) 2016。
Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT. (C) 2016 Author(s).