Origin of the large positive magnetoresistance of Ge1-xMnx granular thin films
Origin of the large positive magnetoresistance of Ge1-xMnx granular thin films
复制标题
Ge1-xMnx颗粒薄膜大正磁阻的起源
DOI:
10.1103/physrevb.95.014417
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发表时间:
2017
影响因子:
3.7
通讯作者:
and S. Ohya
中科院分区:
文献类型:
--
作者:
Y. K. Wakabayashi;R. Akiyama;Y. Takeda;M. Horio;G. Shibata;S. Sakamoto;Y. Ban;Y. Saitoh;H. Yamagami;A. Fujimori;M. Tanaka;and S. Ohya
(GeMn) granular thin films are a unique and promising material for spintronic applications owing to their large positive magnetoresistance (MR). Previous studies of GeMn have suggested that the large MR is related to the nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and a Mn-poor paramagnetic matrix. However, the microscopic origin of the MR has not yet been clarified. Here, we develop a method to separately investigate the magnetic properties of the nanoparticles and the matrix, utilizing the extremely high sensitivity of x-ray magnetic circular dichroism (XMCD) to the local magnetic state of each atom. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that the spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo first order magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR.