Passivation of semiconductors
Passivation of semiconductors
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DOI：
10.1016/0010-938x(90)90087-l
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发表时间：
1990
影响因子：
8.3
通讯作者：
T. Sugano
中科院分区：
文献类型：
--
作者：
T. Sugano
简要回顾了硅钝化和III·V化合物半导体器件表面钝化的物理和技术历史，并以SiO_2薄膜中的载流子陷阱和InP MISFET制作中的技术问题为例，分别阐述了硅钝化和III·V化合物半导体钝化的最新研究课题。
History of physics and technology related to passivation of silicon and III·V compound semiconductor device surface is briefly overviewed, and then carrier trappings in SiO2films and technical problems on InP MISFETs fabrication are discussed as examples illustrating recent topics in passivation of silicon and III·V compound semiconductor, respectively.