Controllable fully spin-polarized transport in a ferromagnetically doped topological insulator junction
Controllable fully spin-polarized transport in a ferromagnetically doped topological insulator junction
复制标题
铁磁掺杂拓扑绝缘体结中的可控完全自旋极化输运
DOI：
10.1063/1.4871683
复制
发表时间：
2014-04
影响因子：
3.2
通讯作者：
Zhou, Guanghui
中科院分区：
文献类型：
--
作者：
Zhou, Benliang;Zhou, Benhu;Tang, Dongsheng;Zhou, Guanghui
我们研究了正常/铁磁/正常二维拓扑绝缘体（TI）结的能带结构和自旋相关输运。通过对角化该系统的哈密顿量，发现该系统的能带结构表明，由于横向空间约束，两侧的边缘态是耦合的，导致了一个间隙开口。此外，磁性杂质诱导的交换场也可以调制两个自旋简并带分裂的能带结构。利用非平衡格林函数方法，分析了自旋相关电导和自旋极化分别与费米能量、交换场强和铁磁TI （FTI）长度的关系。有趣的是，自旋上下通道的简并电导平台被打破，并且由于时间反转对称性的破坏和非弹性散射，两种电导都被磁杂质抑制。自旋相关电导在费米…
We investigate the energy band structure and the spin-dependent transport for a normal/ferromagnetic/normal two-dimension topological insulator (TI) junction. By diagonalizing Hamiltonian for the system, the band structure shows that the edge states on two sides are coupled resulting in a gap opening due to the transverse spatial confinement. Further, the exchange field induced by magnetic impurities can also modulate the band structure with two spin degenerate bands splitting. By using the nonequilibrium Green's function method, the dependence of spin-dependent conductance and spin-polarization on the Fermi energy, the exchange field strength and the ferromagnetic TI (FTI) length are also analyzed, respectively. Interestingly, the degenerate conductance plateaus for spin-up and -down channels are broken, and both the conductances are suppressed by magnetic impurities due to the time-reversal symmetry broken and inelastic scattering. The spin-dependent conductance shows different behaviors when the Fermi ...
登录
查看更多内容
影响因子：
3.2
作者：
Paramita Dutta;S. Maiti;S. Karmakar
通讯作者：
Paramita Dutta;S. Maiti;S. Karmakar
影响因子：
56.9
作者：
Bernevig, B. Andrei;Hughes, Taylor L.;Zhang, Shou-Cheng
通讯作者：
Zhang, Shou-Cheng
影响因子：
56.9
作者：
Koenig, Markus;Wiedmann, Steffen;Zhang, Shou-Cheng
通讯作者：
Zhang, Shou-Cheng
影响因子：
3.7
作者：
Hor, Y. S.;Roushan, P.;Cava, R. J.
通讯作者：
Cava, R. J.
影响因子：
3.2
作者：
M. Zeng;G. Liang
通讯作者：
M. Zeng;G. Liang