Nonpolar nonvolatile resistive switching in Cu doped ZrO2
Nonpolar nonvolatile resistive switching in Cu doped ZrO2
复制标题
Cu 掺杂 ZrO2 中的非极性非易失性电阻开关
DOI：
10.1109/led.2008.919602
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发表时间：
2008-05-01
影响因子：
4.9
通讯作者：
Wang, Wei
中科院分区：
文献类型：
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作者：
Guan, Weihua;Long, Shibing;Wang, Wei
在这封信中，我们报道了铜掺杂的氧化锆存储器件中独特的可重现的非极性电阻开关行为。器件为夹心结构的铜/氧化锆：铜/铂。高阻状态(OFF状态)和低阻状态(ON状态)之间的切换不依赖于施加的偏置电压的极性，并且可以在电压扫描和电压脉冲下实现。高阻和低阻之比约为10(6)。电压脉冲模式下的置位和重置操作可分别快至50us和100us。S连续读出10(4)次以上未发现数据丢失。由于导通电阻与设定顺应性电流的关系，多级存储被认为是可行的。这种开关机制被认为与导电丝状路径的形成和断裂有关。
In this letter, the unique reproducible nonpolar resistive switching behavior is reported in the Cu-doped ZrO2 memory devices. The devices are with the sandwiched structure of Cu/ZrO2:Cu/Pt. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias and can be achieved under both voltage sweeping and voltage pulse. The ratio between the high and low resistance is on the order of 10(6). Set and Reset operation in voltage pulse mode can be as fast as 50 and 100 us, respectively. No data loss is found upon continuous readout for more than 10(4) s. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is believed to be related with the formation and rupture of conducting filamentary paths.