Generalised mathematical model of memristor
Generalised mathematical model of memristor
复制标题
忆阻器的广义数学模型
DOI：
10.1049/iet-cds.2014.0381
复制
发表时间：
2016-05-01
影响因子：
1.3
通讯作者：
Cui, Guangzhao
中科院分区：
文献类型：
--
作者：
Sun, Junwei;Yao, Lina;Cui, Guangzhao
为了有资格作为忆阻器，对应于正弦激励信号的动态系统的箍缩磁滞回线必须在原点处被箍缩，对于任何振幅，并且对于任何频率，以及对于状态变量的任何初始条件。上述条件可以通过模拟来检查，模拟应尽可能多次地重复。但由于模拟次数有限，模拟得到的有限元结果不一定可靠。为了提高判断的可靠性，本文设计了忆阻器的通用数学模型，确定了忆阻器的三个指纹。HP忆阻器、分段线性忆阻器、具有平方非线性的忆阻器和具有立方非线性的忆阻器被包括作为广义忆阻器模型特殊情况。忆阻器的广义数学模型应用于区分忆阻器从三个数学模型的例子。忆阻器的广义数学模型是判断动力学系统是否为忆阻器的必要条件，但不是充分条件，这可以节省我们大量的时间和精力。
To qualify as a memristor, the pinched hysteresis loop of a dynamical system corresponding to a sinusoidal excitation signal must be pinched at the origin, for any amplitude, and for any frequency, as well as for any initial condition of the state variable. The above conditions can be checked by the simulations which should be repeated as many times as possible. However, the times of simulation are limited, the finite results drawn through the simulation are not necessarily reliable. To increase the reliability of the judgment, a generalised mathematical model of memristor is designed in the study, which confirms three fingerprints of memristor. HP memristor, piecewise-linear memristor, memristor with square non-linearity and memristor with cubic non-linearity are included as generalised memristor model special cases. The generalised mathematical model of memristor is applied to distinguish memristor from three mathematical model examples. A generalised mathematical model of memristor is a necessary, but not a sufficient condition for judging whether the dynamical system is or not a memristor, which may save us a lot of time and energy.