The flexible-transparent p-n junction film device of N-doped Cu2O/SnO2 orderly nanowire arrays towards highly photovoltaic conversion and stability
The flexible-transparent p-n junction film device of N-doped Cu2O/SnO2 orderly nanowire arrays towards highly photovoltaic conversion and stability
复制标题
N掺杂Cu2O/SnO2有序纳米线阵列柔性透明p-n结薄膜器件实现高光伏转换和稳定性
DOI：
10.1016/j.cej.2019.122813
复制
发表时间：
2020
影响因子：
15.1
通讯作者：
Li Chaorong
中科院分区：
文献类型：
--
作者：
Pan Jiaqi;Li Shi;Liu Yanyan;Ou Wei;Li Hongli;Zhao Weijie;Wang Jingjing;Song Changsheng;Zheng Yingying;Li Chaorong
通过简单的混合水热溅射方法制备了柔性透明的氮掺杂Cu2O/SnO2p-n结膜器件。在那里，SnO2 纳米线阵列由预溅射种子诱导，并通过水热法在柔性 PEN 基板上生长，随后通过射频溅射沉积 N 掺杂 Cu2O 薄膜。结果表明，该柔性透明器件在可见光下表现出约85%的高透过率，比未掺杂器件明显的光伏转换增强约约1500倍，并且在1000次弯曲期间具有约91%的良好柔性稳定性，这被认为是一种不错的柔性透明光伏器件，这主要归功于N掺杂可以调节带隙以增加透过率，减少晶体缺陷以改善载流子，包括界面传输速率和寿命。有序的SnO2纳米阵列可以释放界面应力，增加柔性稳定性。
The flexible-transparent N-doped Cu2O/SnO2p-n junction film device is prepared via a simple hybrid hydrothermal-sputtering method. There, the SnO2nanowire arrays are induced by the pre-sputtered seeds and grown on the flexible PEN substrate via hydrothermal method, and subsequently the N-doped Cu2O film is deposited via radio-frequency sputtering. As revealed, the flexible-transparent device exhibits highly transmittance of about ~85% in visible light, obvious photovoltaic conversion enhancement of about ~1500 folds than the undoped device, and decent flexible stability of about ~91% during the 1000 times bending, which is regarded as a decent flexible-transparent photovoltaic device and can be mainly ascribed to the N-doping can regulate the band gap to increase the transmittance, reduce the crystal defect to improve the charge carriers, including the interface transport rate and lifetime, the orderly SnO2nano-arrays can release the interfacial stress to increase the flexible stability.