High-pressure Raman study of Ba doped silicon clathrate
High-pressure Raman study of Ba doped silicon clathrate
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DOI：
10.1103/physrevlett.90.155503
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发表时间：
2003-04-18
影响因子：
8.6
通讯作者：
Yamanaka, S
中科院分区：
文献类型：
--
作者：
Kume, T;Fukuoka, H;Yamanaka, S
利用拉曼光谱研究了Ba掺杂Si笼形物在20 GPa高压下的振动特性。通过对Ba_8 Si_（46）和Ba_（6.6）Si_（46）笼形物的低频拉曼测量，在100 cm ~（-1）以下观察到与Ba笼形物有关的振动。高压拉曼光谱的压缩和减压过程中获得的揭示了一个新的相变在7 GPa，和相变的可逆性在15 GPa。我们研究了这些相变的机制，客体和主体框架之间的相互作用，以及振动模式的体积依赖性。
Vibrational properties of Ba doped Si clathrate are investigated at high pressures up to 20 GPa by Raman spectroscopy. Vibrations related with Ba encaged in the Si cages are observed below 100 cm(-1) by low-frequency Raman measurements of Ba8Si46 and Ba6.6Si46 clathrates. The high-pressure Raman spectra obtained for both compression and decompression processes reveal a new phase transition at 7 GPa, and the reversibility of the phase transition at 15 GPa. We investigate the mechanisms of these phase transitions, the interaction between the guest and host frame, and the volume dependence of the vibrational modes.