Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
复制标题
GaN(0001)模板上有机金属化学气相沉积In掺杂ZnO薄膜的性能
DOI：
--
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
S. Denbaars
中科院分区：
文献类型：
--
作者：
Tammy Ben;T. Ive;C. Walle;U. Mishra;J. Speck;S. Denbaars
我们研究了在半绝缘GaN（0001）模板上用金属有机化学气相沉积法生长的铟掺杂氧化锌层的性质。镜面反射和透明薄膜生长的n型载流子浓度高达1.82 × 1019 cm−3，通过霍尔测量确定，所有In掺杂薄膜的载流子浓度明显高于可比的未掺杂薄膜。对于低In流，载流子浓度随着三甲基铟（TMIn）流相应地增加，直到实现1.82 × 1019 cm-3的最大载流子浓度。对于较高的In流量，载流子浓度随着TMIn流量的增加而降低。In掺杂薄膜的薄层电阻低至185 Ω/sq，与未掺杂ZnO薄膜相比有显著降低。我们的n型掺杂的研究表明，在是一个有效的掺杂剂，用于控制ZnO的n型导电性。
We investigated the properties of indium-doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi-insulating GaN(0001) templates. Specular and transparent films were grown with n-type carrier concentrations up to 1.82 × 1019 cm−3 as determined by Hall measurements, and all In-doped films had carrier concentrations significantly higher than that of a comparable undoped film. For low In flows, the carrier concentration increased accordingly with trimethyl-indium (TMIn) flow until a maximum carrier concentration of 1.82 × 1019 cm−3 was realized. For higher In flows, the carrier concentration decreased with increasing TMIn flow rate. Sheet resistance as low as 185 Ω/sq was achieved for the In-doped films, which is a significant decrease from that of a comparable undoped ZnO film. Our n-type doping studies show that In is an effective dopant for controlling the n-type conductivity of ZnO.