CRITICAL CURRENTS OF SUPERCONDUCTING MICROBRIDGES
CRITICAL CURRENTS OF SUPERCONDUCTING MICROBRIDGES
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DOI：
10.1103/physrevb.14.1045
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发表时间：
1976-01-01
影响因子：
3.7
通讯作者：
SKOCPOL, WJ
中科院分区：
文献类型：
--
作者：
SKOCPOL, WJ
测量了宽度为 0.3 至 10 μm 的长均匀超导锡微桥的临界电流。在最窄的桥中，电流密度几乎是均匀的，并且临界电流密度的大小和温度依赖性与金兹堡-朗道预测一致。在较宽的桥中，电流密度在薄膜边缘处达到峰值，并且临界电流的大小和温度依赖性发生改变。非局域线性电动力学的理论计算以及非线性峰值电流密度的调整以包括相干长度效应似乎足以解释更宽的电桥中临界电流的幅度和温度依赖性。
The critical currents of long uniform superconducting tin microbridges ranging in width from 0.3 to 10 μm have been measured. In the narrowest bridges the current density is nearly uniform and the magnitude and temperature dependence of the critical-current density agree with the Ginzburg-Landau prediction. In wider bridges the current density becomes peaked at the edges of the film and the magnitude and temperature dependence of the critical current are altered. Theoretical calculations of the nonlocal linear electrodynamics together with adjustment of the nonlinear peak current density to include coherence-length effects appear adequate to explain both the magnitude and the temperature dependence of the critical currents in the wider bridges.