Room-temperature efficient light detection by amorphous Ge quantum wells.
Room-temperature efficient light detection by amorphous Ge quantum wells.
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DOI：
10.1186/1556-276x-8-128
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发表时间：
2013-03-16
影响因子：
--
通讯作者：
Mirabella S
中科院分区：
文献类型：
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作者：
Cosentino S;Miritello M;Crupi I;Nicotra G;Simone F;Spinella C;Terrasi A;Mirabella S
本文采用磁控溅射的方法，在SiO2层中制备了厚度为2 ~ 30nm的超薄非晶锗薄膜，并将其作为光敏剂应用于光电探测器器件中。由于量子约束效应的存在，可见光子的吸收发生了显著的变化，这导致了带隙中的蓝移（从0.8 eV到1.8 eV）和受限载流子的光振荡器强度的增强（高达三倍）。已经报道的量子约束效应被用于增强Ge量子阱的光探测，正如光电探测器内部量子效率为70%所证明的那样。
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%.