METAL-INSULATOR TRANSITION OF THE SPINLESS FERMIONS ON THE KAGOME LATTICE
METAL-INSULATOR TRANSITION OF THE SPINLESS FERMIONS ON THE KAGOME LATTICE
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Kagome 晶格上无轴费米子的金属-绝缘体转变
DOI：
10.1142/s0217984911026656
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发表时间：
2011
影响因子：
1.9
通讯作者：
PETER FULDE
中科院分区：
文献类型：
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作者：
MASAAKI NAKAMURA;SATOSHI NISHIMOTO;AROON O'BRIEN;PETER FULDE
本文讨论了Kagomé晶格上具有最近邻排斥的无自旋费米子模型在1/3和2/3填充时的金属-绝缘体跃迁。利用精确对角化、密度矩阵重整化群方法和无规相位近似对系统进行了分析。在强耦合区，系统用环交换过程描述。在中间耦合区，我们发现，在1/3和2/3填充的金属-绝缘体转变的定性性质是完全不同的，反映了费米能级附近的带结构的差异。
We discuss the metal–insulator transition of the spinless fermion model with nearest-neighbor repulsion on the Kagomé lattice at 1/3- and 2/3-filling. The system is analyzed by using exact diagonalization, the density-matrix renormalization group methods and the random phase approximation. In the strong-coupling region, the system is described by ring exchange processes. In the intermediate-coupling regime, we find that the qualitative properties of the metal–insulator transition at 1/3- and 2/3-filling are totally different reflecting the difference in the band structure near the Fermi level.