Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates
Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates
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DOI：
10.1109/tmag.2005.854686
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发表时间：
2005-04
影响因子：
2.1
通讯作者：
Y. Endo;T. Satō;A. Takita;Y. Kawamura;M. Yamamoto
中科院分区：
文献类型：
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作者：
Y. Endo;T. Satō;A. Takita;Y. Kawamura;M. Yamamoto
研究了在Si衬底上生长的Cr-AlN和Mn-AlN薄膜的磁、电性能和结构。Al/sub 0.93/Cr/sub 0.07/N和Al/sub 0.91/Mn/sub 0.09/N薄膜中的每个磁性状态都随着温度的降低而从顺磁状态转变为超顺磁状态。在每个薄膜中不能观察到室温（RT）铁磁性。Al/sub 0.93/Cr/sub 0.07/N和Al/sub 0.91/Mn/sub 0.09/N薄膜中的每种电性质变为半导体，因为这些薄膜的电导率在室温下高于10/sup 7//spl mu//spl Ω//spl middot/cm。可以观察到Al/sub 0.93/Cr/sub 0.07/N薄膜的隧穿现象和Al/sub 0.91/Mn/sub 0.09/N薄膜的整流现象。此外，每个薄膜中的晶体结构也是具有hcp（0001）择优取向的多晶结构。
We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al/sub 0.93/Cr/sub 0.07/N and Al/sub 0.91/Mn/sub 0.09/N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al/sub 0.93/Cr/sub 0.07/N and Al/sub 0.91/Mn/sub 0.09/N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 10/sup 7//spl mu//spl Omega//spl middot/cm at RT. At 77 K, tunneling phenomena for the Al/sub 0.93/Cr/sub 0.07/N thin film and rectification for the Al/sub 0.91/Mn/sub 0.09/N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hcp (0001).