A single-atom quantum memory in silicon
A single-atom quantum memory in silicon
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DOI：
10.1088/2058-9565/aa63a4
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发表时间：
2017-03-01
影响因子：
6.7
通讯作者：
Morello, Andrea
中科院分区：
文献类型：
--
作者：
Freer, Solomon;Simmons, Stephanie;Morello, Andrea
长相干时间和快速选通操作是理想的，但对物理量子比特的要求往往是相互冲突的。这一冲突可以通过求助于快速量子比特进行操作，并在空闲时将它们的状态存储在“量子存储器”中来解决。硅中的P-31施主自然而然地配备了一个快速量子比特(电子自旋)和一个长寿命量子比特(P-31核自旋)，在低温下以束缚态共存。在这里，我们展示了在同位素浓缩的Si-28中，从单个施主电子自旋到它的宿主磷原子核的量子信息的存储和检索。记忆过程的保真度通过状态和过程断层成像来表征。我们报告说，整个过程的保真度F-p接近81%，内存存储时间高达80ms。这些值受到高功率射频脉冲后电子自旋共振频率的瞬时漂移的限制。
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The P-31 donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the P-31 nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched Si-28. The fidelity of the memory process is characterised via both state and process tomography. Wereport an overall process fidelity F-p approximate to 81%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.