Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy
Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy
复制标题
原子氢对射频分子束外延生长 Ga(In)NAs 的影响
DOI：
10.1002/pssc.200390016
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Okada
中科院分区：
文献类型：
--
作者：
A. Ohmae;N. Matsumoto;M. Kawabe;Y. Okada
在这项工作中，我们从生长动力学和晶体质量的角度研究了原子H辐照对射频分子束外延薄膜生长GaNAs和GaInNAs的影响。 Ga(In)NAs的晶体质量主要通过X射线衍射表征，并通过原子力显微镜表征表面形貌。研究发现，射频分子束外延中 GaN 和 GaInNA 生长过程中的原子 H 辐照可有效提高这些外延层的整体质量。此外，发现原子H照射具有抑制三维生长从而促进二维生长的效果，并且对于钝化缺陷和抑制相分离是有效的。这些结果应该会进一步改进在 GaN 和 GaInNA 器件中需要突变接口的新颖结构。
In this work, we have investigated the effect of atomic H irradiation on the thin-film growth of GaNAs and GaInNAs by RF-molecular beam epitaxy from the viewpoint of growth dynamics and crystal quality. The crystal quality of Ga(In)NAs was mainly characterized by X-ray diffraction and the surface morphology was characterized by using atomic force microscope. The atomic H irradiation during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy was found to be effective in improving the overall quality of these epilayers. Further, it was found that atomic H irradiation has an effect of suppressing the three-dimensional growth thereby promoting a two-dimensional growth as well as is effective in passivating the defects and suppressing the phase separation. These results should bring further improvements of novel structures that require abrupt interfaces in GaNAs and GaInNAs based devices.