A fast, flexible, positive and negative adaptive body-bias generator in 28nm FDSOI

A fast, flexible, positive and negative adaptive body-bias generator in 28nm FDSOI
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采用 28nm FDSOI 的快速、灵活、正负自适应体偏置发生器

DOI:
10.1109/vlsic.2016.7573479
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发表时间:
2016
期刊:
2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)
影响因子:
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通讯作者:
B. Nikolić
B. Nikolić
中科院分区:
--
文献类型:
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作者:
Milovan Blagojevic;M. Cochet;Ben Keller;P. Flatresse;A. Vladimirescu;B. Nikolić

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这项工作展示了一个完全集成的,紧凑的体偏置发生器(BBG),具有良好的电压步进和低于100ns的响应时间,用于过程和电压补偿以及动态能量优化。该发生器采用28nm UTBB FDSOI实现,仅使用1.0V核心和1.8V IO电压输入。模块化设计可轻松集成到目标移动soc中,可扩展到任何尺寸的电源域。高分辨率(5mV Vth)、100ns满量程和5ns增量阶跃响应、低功耗(< 10μW)和1.2%的面积开销实现了细粒度自适应体偏置(ABB)。实验证明了在200mV VCORE变化范围内动态跟踪1%目标频率的能力。
This work demonstrates a fully-integrated, compact body-bias generator (BBG) with a fine voltage step and sub-100ns response time for use in process and voltage compensation as well as dynamic energy optimization. The generator is implemented in 28nm UTBB FDSOI, using only 1.0V core and 1.8V IO voltage inputs. A modular design enables easy integration into target mobile SoCs, scalable to power domains of any size. The fine resolution (5mV Vth), 100ns full-scale and 5ns incremental step response, low power (<;10μW), and 1.2% area overhead enable fine-grained adaptive body-biasing (ABB). The ability to dynamically track a target frequency within 1% for 200mV of VCORE change is demonstrated experimentally.