Mechanistic study of plasma damage of low k dielectric surfaces
Mechanistic study of plasma damage of low k dielectric surfaces
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低k介质表面等离子体损伤机理研究
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
G. Kloster
中科院分区：
文献类型：
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作者：
J. Bao;Hualiang Shi;Junjun Liu;Huai Huang;P. Ho;M. D. Goodner;M. Moinpour;G. Kloster
从机理的角度研究了等离子体对低k介质材料的损伤。在标准反应离子刻蚀室中采用Ar、O2、N2、N2、ScinH2和H2等离子体处理低k电介质膜，并通过角分辨X射线光电子能谱、X射线反射率、傅里叶变换红外光谱和接触角测量表征损伤。在受损低k材料的顶面上观察到碳耗尽和表面致密化，而本体基本上不受影响。等离子体损伤被认为是一个复杂的现象，涉及化学和物理效应，取决于化学反应性和等离子体物种的能量和质量。采用一种具有分离离子和原子自由基的下游混合等离子体源，研究了它们各自在等离子体损伤过程中的作用。离子被发现在等离子体损伤过程中起着更重要的作用。低介电常数材料的介电常数可以提高20%以上，这是由于p。
Plasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by Ar, O2, N2, N2∕H2, and H2 plasmas in a standard reactive ion etching chamber and the damage was characterized by angle resolved x-ray photoelectron spectroscopy, x-ray reflectivity, Fourier transform infrared spectroscopy, and contact angle measurements. Both carbon depletion and surface densification were observed on the top surface of damaged low k materials while the bulk remained largely unaffected. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. A downstream hybrid plasma source with separate ions and atomic radicals was employed to study their respective roles in the plasma damage process. Ions were found to play a more important role in the plasma damage process. The dielectric constant of low k materials can increase up to 20% due to p...