Quantum size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures
Quantum size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures
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DOI：
10.1103/physrevb.75.155328
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发表时间：
2006-08
影响因子：
3.7
通讯作者：
S. Ohya;P. Hai;Y. Mizuno;M. Tanaka
中科院分区：
文献类型：
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作者：
S. Ohya;P. Hai;Y. Mizuno;M. Tanaka
研究了铁磁半导体GaMnAs量子阱异质结中的共振隧穿效应及其引起的隧穿磁电阻（TMR）的增加。GaMnAs量子阱的量子能级可以用考虑p-d交换作用的价带kp模型来解释。研究还发现，注入载流子的电极的费米能级对于观察该系统中的共振隧穿很重要。
We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.