High Quality GaAs Nanowires Grown on Glass Substrates
High Quality GaAs Nanowires Grown on Glass Substrates
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DOI：
10.1021/nl204314z
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发表时间：
2012-04-01
期刊：
影响因子：
10.8
通讯作者：
Lipsanen, Harri
中科院分区：
文献类型：
--
作者：
Dhaka, Veer;Haggren, Tuomas;Lipsanen, Harri
我们首次报道了以金为催化剂，采用常压金属有机气相外延技术，通过气-液-固机制在低成本玻璃衬底上直接生长出了GaAs纳米线。在这项工作中使用的基材是浮法玻璃类型，通常在家用窗户玻璃中看到。在410~580℃的生长温度范围内，研究了在玻璃上生长的GaAs纳米线，在450℃和470℃的生长温度下观察到了生长速率接近33 nm/S的圆柱形非锥形纳米线，而在580℃的生长温度下观察到了高度锥形的柱状纳米线。X-射线衍射仪和透射电子显微镜表明，纳米线具有完美的闪锌矿结构，没有平面结构缺陷或层错。在低温和室温下都观察到了很强的光致发光，表明了高光学质量的GaAs纳米线。在无杂质熔融二氧化硅衬底上的生长比较表明，纳米线在无意中从玻璃衬底中掺杂。
We report for the first time the growth of GaAs nanowires directly on low-cost glass substrates using atmospheric pressure metal organic vapor phase epitaxy via a vapor liquid solid mechanism with gold as catalyst. Substrates used in this work were of float glass type typically seen in household window glasses. Growth of GaAs nanowires on glass were investigated for growth temperatures between 410 and 580 degrees C. Perfectly cylindrical nontapered nanowires with a growth rate of similar to 33 nm/s were observed at growth temperatures of 450 and 470 degrees C, whereas highly tapered pillar-like wires were observed at 580 degrees C. Nanowires grew horizontally on the glass surface at 410 degrees C with a tendency to grow in vertically from the substrate as the growth temperature was increased. X-ray diffraction and transmission electron microscopy revealed that the nanowires have a perfect zinc blende structure with no planar structural defects or stacking faults. Strong photoluminescence emission was observed both at low temperature and room temperature indicating a high optical quality of GaAs nanowires. Growth comparison on impurity free fused silica substrate suggests unintentional doping of the nanowires from the glass substrate.