Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator
Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator
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DOI：
10.1002/aelm.201901356
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发表时间：
2020-03-20
影响因子：
6.2
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Yajima, Takeaki;Nishimura, Tomonori;Toriumi, Akira
功能材料的铁电选通经常受到影响，因为铁电材料是差的绝缘体。在这项研究中，最近报道的铁电HfO 2，一个大的带隙氧化物具有优良的绝缘性能，利用静电门的原型金属-绝缘体过渡材料，VO 2。通过保护亚稳铁电相不受劣化，铁电门控成功地展示了超薄VO 2沟道的背栅几何形状。所观察到的调制VO 2沟道电导率起源于铁电极化反转的HfO 2栅极绝缘体结合VO 2金属-绝缘体转变。这些结果表明，铁电HfO 2的静电控制的物质状态的基础研究和设备应用的显着潜力。
Ferroelectric gating of functional materials has often suffered because ferroelectric materials are poor insulators. In this study, the recently reported ferroelectric HfO2, a large band-gap oxide with excellent insulating properties, is exploited for electrostatically gating the archetypical metal-insulator transition material, VO2. By protecting the meta-stable ferroelectric phase from deterioration, the ferroelectric gating is successfully demonstrated with an ultra-thin VO2 channel in the back-gate geometry. The observed modulation of the VO2 channel conductivity is originated from the ferroelectric polarization reversal in the HfO2 gate insulator combined with the VO2 metal-insulator transition. These results demonstrate the significant potential of ferroelectric HfO2 for electrostatically controlling the state of matter for both fundamental research and device application.