Design and theoretical calculation of novel GeSn fully depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect
Design and theoretical calculation of novel GeSn fully depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect
复制标题
具有抑制GIDL效应的量子限制模型的新型GeSn全耗尽n隧道FET的设计和理论计算
DOI：
10.1016/j.spmi.2018.04.028
复制
发表时间：
2018
影响因子：
3.1
通讯作者：
Wang Bin
中科院分区：
文献类型：
--
作者：
Liu Xiangyu;Hu Huiyong;Wang Meng;Miao Yuanhao;Han Genquan;Wang Bin
