Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures
Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures
复制标题
通过纳米孔径注入硅基体中的锗原子分布的原子探针断层扫描评估
DOI：
10.1088/1361-6528/aa7f49
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发表时间：
2017
期刊：
影响因子：
3.5
通讯作者：
Nagai Y
中科院分区：
文献类型：
--
作者：
Tu Y;Han B;Shimizu Y;Inoue K;Fukui Y;Yano M;Tanii T;Shinada T;Nagai Y
通过纳米孔径注入离子是一种很有前途的在硅基质中精确定位离子的方法，这是下一代电子和量子计算器件的要求。本文报道了应用原子探针层析成像技术(APT)，通过直径为10 nm的纳米孔径研究注入后硅中Ge原子的三维分布，以评估注入的掺杂量和空间分布。APT的实验结果与考虑了光刻和离子注入过程中沟道和阻流等多种影响的简单模拟结果相一致。
Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.