Performance optimization of GaAs-based photomixers as sources of THz radiation
Performance optimization of GaAs-based photomixers as sources of THz radiation
复制标题
基于 GaAs 的光混频器作为太赫兹辐射源的性能优化
DOI：
10.1007/s00339-007-3909-9
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Mikulics
中科院分区：
文献类型：
--
作者：
P. Kordos;M. Marso;M. Mikulics
报道了利用新型器件结构优化GaAs基光混合器的性能。研究了具有凹陷叉指接触的低温生长GaAs器件，该器件改善了有源区的电场分布。此外，具有增强的混合面积使用手指接触集成到共面带状线的设备进行了实验验证。这种光混合器的输出功率是传统表面接触的两倍。高能氮注入GaAs被用来作为替代LT GaAs，并观察到输出功率的进一步增加。在850 GHz处测量的2.6 μW的功率水平高于之前报道的THz区域中任何光混合器的功率水平。
The performance optimization of GaAs-based photomixers using novel device structures is reported. Low-temperature grown (LT) GaAs devices with recessed interdigitated finger contacts, which improve the electric field distribution in the active region, were investigated. Further, the devices with an enhanced mixing area using finger contacts integrated into the coplanar stripline were experimentally verified. The output power of such photomixers was twice of that with conventional surface contacts. High-energy nitrogen implanted GaAs was used as an alternative to LT GaAs, and a further increase of the output power was observed. Measured power level of 2.6 μW at 850 GHz was higher than that reported before for any photomixer in the THz region.