Short-Circuit Characterization and Protection of 10-kV SiC mosfet
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
复制标题
10kV SiC MOSFET 的短路特性和保护
DOI：
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发表时间：
2019
影响因子：
6.7
通讯作者：
L. Tolbert
中科院分区：
文献类型：
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作者：
Shiqi Ji;Marko Laitinen;Xingxuan Huang;Jingjing Sun;William Giewont;Fei Wang;L. Tolbert
本文介绍了第三代10kv / 20a碳化硅（SiC） mosfet的温度相关短路性能的表征。详细介绍了由相腿结构和具有温度控制功能的10kv高速固态断路器组成的测试平台。提出了一种响应时间为1.5 μs的基于fpga的短路保护电路，并将其集成到栅极驱动器中。通过平台验证了短路保护的有效性。测试和讨论了不同直流电压（500v ~ 6kv）下硬开关故障和负载下故障（FUL）类型的短路特性。饱和电流随直流电压增大而增大，在6kv时达到360a。与低压SiC器件不同，FUL型故障不存在电流尖峰。温度相关的短路性能也呈现在25至125°C范围内。不同初始结温下短路波形的差异可以忽略不计。建立了10kv SiC mosfet的热模型，用于短路时的结温估计和初始结温对短路性能的影响分析。
This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail. A novel FPGA-based short-circuit protection circuit having a response time of 1.5 μs is proposed and integrated into the gate driver. The short-circuit protection is validated through the platform. The short-circuit characteristics for both the hard switching fault and fault under load (FUL) types at various dc-link voltages (from 500 V to 6 kV) are tested and discussed. The saturation current increases with dc-link voltage and achieves 360 A at 6 kV. Different from low voltage SiC devices, there is no current spike in FUL type of fault. The temperature-dependent short-circuit performance is also presented from 25 to 125 °C. The difference of short-circuit waveforms at various initial junction temperatures can be neglected. A thermal model of the 10-kV SiC mosfet is built for the junction temperature estimation during the short circuit and for analysis of the initial junction temperature impact on the short-circuit performance.