In situ Raman monitoring of He2+ irradiation induced damage in a UO2 ceramic
In situ Raman monitoring of He2+ irradiation induced damage in a UO2 ceramic
复制标题
对 UO2 陶瓷中 He2 辐照引起的损伤进行原位拉曼监测
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
P. Simon
中科院分区：
文献类型：
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作者：
G. Guimbretière;L. Desgranges;A. Canizarès;R. Caraballo;F. Duval;N. Raimboux;R. Omnée;M. Ammar;C. Jegou;P. Simon
在[Ar/H2, 95/5]气体环境中对UO2陶瓷进行了原位拉曼探测，并在回旋加速器He2+离子照射下进行了原位拉曼探测。结果表明，在50 nA的离子流和170±10℃的离子束加热条件下，拉曼缺陷带的生长表现出独特的动力学，可以用简单的直接冲击模型很好地模拟，退火速率常数为5.6 × 10−4±4 × 10−5 s−1。此外，还观察到离子束诱导的氩等离子体是离子束存在的敏感探针。
The in situ Raman probing of a UO2 ceramic in [Ar/H2, 95/5] gas atmosphere followed by exposure to He2+ ionic irradiation coming from a cyclotron accelerator was implemented. It was observed that the growth of Raman defect bands exhibits a unique kinetic nicely modelized by a simple direct impact model, and with an annealing rate constant of 5.6 × 10−4 ± 4 × 10−5 s−1 for an ionic flow of 50 nA and an ions-beam induced sample heating of 170 ± 10 °C. Also, it was observed that the Ar plasma induced by the ions-beam is a sensitive probe of the presence of the ions-beam.