A Novel Detachable Gate Driver Unit With Ultralow Inductance for Integrated Gate Commutated Thyristor
A Novel Detachable Gate Driver Unit With Ultralow Inductance for Integrated Gate Commutated Thyristor
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DOI：
10.1109/tpel.2022.3187697
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Rong Zeng
中科院分区：
文献类型：
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作者：
Jie Shang;Chen Zhengyu;Biao Zhao;Zhanqing Yu;Jinpeng Wu;Lin Dong;Rong Zeng
Under the background of clean energy connected to the grid, high-capacity power electronics device integrated gate commutated thyristor (IGCT) has a bright future. In order to increase the convenience of replacement and longevity of service, a novel detachable gate driver unit (DGDU) concept for IGCT is proposed in this letter. To ensure the turn-off capability, both connection scheme and board optimization on DGDU are applied to minimize the stray inductance. Besides, the effects because of detachable connecter on structure and thermal characteristics are analyzed. Afterwards, an overlap scheme of DGDU with ultra-low inductance is proposed for IGCT. Finally, a 4-inch prototype and a single-phase full-bridge platform are developed for test. The turn-off capability of DGDU is verified by pulse experiment, which could turn-off 5kA current successfully. The stray inductance of DGDU is calculated based on the experimental result and is only 4&x0025; larger than conventional GDU, which means the commutation capability has little decrease. Furthermore, the continuous running reliability is verified by 2200V-DC-voltage, 1300A-effective-current power cycling experiments.
