Sputtering Yields for Normally Incident Hg + -Ion Bombardment at Low Ion Energy
Sputtering Yields for Normally Incident Hg + -Ion Bombardment at Low Ion Energy
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低离子能量下正常入射汞离子轰击的溅射产率
DOI：
10.1103/physrev.108.35
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发表时间：
1957
期刊：
影响因子：
--
通讯作者：
G. Wehner
中科院分区：
文献类型：
--
作者：
G. Wehner
在30 ev至400 ev的能量范围内测量了26种金属在垂直入射Hg+离子轰击下的溅射产率。靶像大的负朗缪尔探针一样浸没在高密度（离子电流密度高达15 ma/cm 2）的低压（1 μ）Hg等离子体中。通过测量从靶的重量损失获得绝对屈服值;通过测量溅射材料沉积在可移动玻璃带收集器上的速度获得相对值。
Sputtering yields for 26 metals under normally incident Hg+-ion bombardment were measured in the energy range 30 ev to 400 ev. The targets were immersed like large negative Langmuir probes in a low-pressure (1 μ) Hg plasma of high density (ion current densities up to 15 ma/cm 2). Absolute yield values were obtained by measuring the weight loss from the target; relative values by measuring the speed with which sputtered material is deposited on a movable glass-ribbon collector.