Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy
Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy
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扫描隧道显微镜观察到同步辐射刺激 Si(111) 表面 SiO2 薄膜的解吸
DOI：
10.1116/1.581882
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
T. Urisu
中科院分区：
文献类型：
--
作者：
T. Miyamae;H. Uchida;I. Munro;T. Urisu
利用扫描隧道显微镜（STM）、低能电子衍射（LEED）和俄歇电子能谱研究了同步辐射（SR）对二氧化硅薄膜的激发脱附。在700 °C的表面温度下，SR照射2 h后，用LEED观察到了Si（111）-7 × 7的重构图案。 STM图像显示出原子级平坦的Si（111）-7 7表面。SR辐照表面的STM形貌表明，氧化物脱附机制是完全不同的SiO2膜的热脱附。这些结果表明，原子级平坦的硅表面可以在低温下通过使用该技术。
Synchrotron radiation (SR) stimulated desorption of silicon dioxide thin films was studied using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy. Reconstructed Si(111)-7×7 patterns were observed by LEED after 2 h SR irradiation at a surface temperature of 700 °C. The STM images show an atomically flat Si(111)-7×7 surface. STM topographs of SR-irradiated surfaces suggest that the oxide desorption mechanism is completely different from that of thermal desorption of SiO2 film. These results indicate that the atomically flat Si surface can be obtained at low temperatures by using this technique.
影响因子：
1.4
作者：
P. Avouris;I. Lyo;F. Bozsó
通讯作者：
P. Avouris;I. Lyo;F. Bozsó