Tunnel magnetoresistance in Co nanoparticle/Co–C60 compound hybrid system
Tunnel magnetoresistance in Co nanoparticle/Co–C60 compound hybrid system
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DOI：
10.1063/1.2354035
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发表时间：
2006-09
影响因子：
4
通讯作者：
S. Sakai;K. Yakushiji;S. Mitani;K. Takanashi;H. Naramoto;P. Avramov;K. Narumi;V. Lavrentiev;Y. Maeda
中科院分区：
文献类型：
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作者：
S. Sakai;K. Yakushiji;S. Mitani;K. Takanashi;H. Naramoto;P. Avramov;K. Narumi;V. Lavrentiev;Y. Maeda
在超高真空条件下，采用Co和C60交替沉积的方法制备了Co颗粒/Co-C60化合物纳米杂化薄膜。所有的拉曼光谱，磁化曲线，和隧道电导率的结论是，混合系统具有颗粒结构的Co纳米颗粒嵌入在Co-C60化合物矩阵。在2K和10 kOe下，电子隧穿Co-C_（60）化合物势垒的磁电阻率为26%。此外，在磁输运性质中发现了非常大的偏置电压依赖性。
A nanometer-scale hybrid film of Co particle/Co–C60 compound was prepared by alternate deposition of Co and C60 under UHV condition. All of Raman spectra, magnetization curves, and tunnel conductivity concluded that the hybrid system has a granular structure consisting of Co nanoparticles embedded in a Co–C60 compound matrix. The magnetoresistance ratio of 26% was obtained at 2K and 10kOe for the electron tunneling across the Co–C60 compound barrier. In addition, anomalously large bias voltage dependence was found in the magnetotransport properties.