Low-loss composite photonic platform based on 2D semiconductor monolayers
Low-loss composite photonic platform based on 2D semiconductor monolayers
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DOI：
10.1038/s41566-020-0590-4
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发表时间：
2020-02-24
期刊：
影响因子：
35
通讯作者：
Lipson, Michal
中科院分区：
文献类型：
--
作者：
Datta, Ipshita;Chae, Sang Hoon;Lipson, Michal
过渡金属二卤代化合物(TMD)在激子共振附近的光学性质随着掺杂的增加而发生显著变化。然而，在远离这些共振的波长上，掺杂对TMD的光学性质的影响知之甚少，因为这种材料是透明的，因此可以用于光子电路。我们通过将单层二硫化钨(WS2)集成在氮化硅光子结构上来增强与单层的光-物质相互作用，从而证明了WS2在近红外波长(透射区深处)具有很强的电折变响应。结果表明，掺杂引起的相变相对于吸收的变化(|增量n/增量k|)为125，明显高于通常用于硅光子调制器的材料，包括硅和硅上的III-V材料，而插入损耗可以忽略不计。
The optical properties of transition metal dichalcogenides (TMDs) are known to change dramatically with doping near their excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs at wavelengths far from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. We demonstrate the strong electrorefractive response of monolayer tungsten disulfide (WS2) at near-infrared wavelengths (deep in the transparency regime) by integrating it on silicon nitride photonic structures to enhance the light-matter interaction with the monolayer. We show that the doping-induced phase change relative to the change in absorption (| increment n/increment k|) is 125, which is significantly higher than the | increment n/increment k| observed in materials commonly employed for silicon photonic modulators, including Si and III-V on Si, while accompanied by negligible insertion loss.