POSITRON TRAPPING AT DIVACANCIES IN THIN POLYCRYSTALLINE CDTE-FILMS DEPOSITED ON GLASS
POSITRON TRAPPING AT DIVACANCIES IN THIN POLYCRYSTALLINE CDTE-FILMS DEPOSITED ON GLASS
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DOI：
10.1063/1.111994
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发表时间：
1994-03-14
影响因子：
4
通讯作者：
TATARENKO, S
中科院分区：
文献类型：
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作者：
LISZKAY, L;CORBEL, C;TATARENKO, S
我们在普通玻璃和铟锡镀膜玻璃衬底上进行了220℃真空蒸发生长CdTe薄膜的正电子湮灭实验。通过检验价态湮灭参数S与芯态湮灭参数W的线性关系，我们引入了一种分析数据的方法，直接表明在所有薄膜中都可以存在相同的空位缺陷。通过比较缺陷处的核湮灭参数与V（Cd）空位处的核湮灭参数，我们可以确定该缺陷为空位V(Cd)-V（Te）。在400℃空气中退火约30 min后，其在膜中的浓度从10(18)cm-3左右降低到10(16)cm-3以下。氯掺杂似乎稳定了空位。
We have performed positron annihilation experiments on CdTe films grown by vacuum evaporation at 220-degrees-C on both plain glass and indium-tin-oxide-coated glass substrates. By checking the linearity of the valence annihilation parameter S versus the core annihilation parameter W we introduce a method to analyze the data which directly shows that the same vacancy defect can be present in all the films. By comparing the core annihilation parameter at the defect to that at the V(Cd) vacancy we can identify this defect as the divacancy V(Cd)-V(Te). Its concentration in the films decreases from about 10(18) to less than 10(16) cm-3 after annealing in air at 400-degrees-C for about 30 min. Chlorine doping seems to stabilize the divacancies.