Effect of bake/cure temperature of an advanced organic ultra low-k material on the interface adhesion strength to metal barriers

Effect of bake/cure temperature of an advanced organic ultra low-k material on the interface adhesion strength to metal barriers
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DOI:
10.1063/1.3561434
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发表时间:
2011-04
影响因子:
3.2
通讯作者:
K. Vanstreels;M. Pantouvaki;A. Ferchichi;P. Verdonck;T. Conard;Y. Ono;M. Matsutani;K. Nakatani;M. Baklanov
K. Vanstreels;M. Pantouvaki;A. Ferchichi;P. Verdonck;T. Conard;Y. Ono;M. Matsutani;K. Nakatani;M. Baklanov
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
K. Vanstreels;M. Pantouvaki;A. Ferchichi;P. Verdonck;T. Conard;Y. Ono;M. Matsutani;K. Nakatani;M. Baklanov

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采用四点弯曲技术定量测量了一种新型高分子低介电常数材料与不同金属阻挡层的界面结合强度。测试不同的样品配置,以找到研究聚合物/屏障界面粘合强度的最佳配置。在薄膜叠层侧的缺口的不对称的样品配置被认为是最合适的方法来研究这个接口的粘附强度。更详细地研究了烘烤/固化温度对聚合物与阻隔层之间的粘合强度的影响。较高的固化温度导致聚合物中较低量的三重C-键和较低的聚合物/阻挡层界面粘合强度,而没有观察到光学和机械性能的差异。此外,发现在界面处形成的较高量的Ta-C键改善了聚合物/阻挡层界面粘附,从而表明聚合物和阻挡层之间的化学相互作用是聚合物/阻挡层界面粘附的主要原因。
The interface adhesion strength of an advanced polymeric low-k material to different metal barriers was quantitatively measured using the four-point bending technique. Different sample configurations were tested in order to find the optimal configuration to study the polymer/barrier interface adhesion strength. The asymmetrical sample configuration with the notch at the film stack side was found to be the most suitable approach to study the adhesion strength of this interface. The effect of bake/cure temperature on the adhesion strength between polymer and barrier was investigated in more detail. Higher cure temperatures resulted in a lower amount of triple C-bonds in the polymer and lower polymer/barrier interface adhesion strength, while no differences in optical and mechanical properties were observed. Moreover, it was found that higher amount of Ta–C bonds formed at the interface improved the polymer/barrier interface adhesion, thereby suggesting that the chemical interaction between the polymer and m...