Structure and electronic properties of InN and In-rich group III-nitride alloys
Structure and electronic properties of InN and In-rich group III-nitride alloys
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DOI：
10.1088/0022-3727/39/5/r01
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发表时间：
2006-02
期刊：
影响因子：
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通讯作者：
W. Walukiewicz;J. Ager;K. Yu;Z. Liliental-Weber;Junqiao Wu;S. X. Li;S. X. Li;R. Jones;R. J
中科院分区：
文献类型：
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作者：
W. Walukiewicz;J. Ager;K. Yu;Z. Liliental-Weber;Junqiao Wu;S. X. Li;S. X. Li;R. Jones;R. J
综述了InN和富In InGaN的结构、光学和电学实验研究。薄膜生长的最新进展已经产生了InN的单晶外延层，其在结构质量上类似于在类似条件下制备的GaN膜，并且其可以具有低于1 × 1018 cm-3的电子浓度和超过2000 cm 2（Vs）-1的迁移率。利用光吸收、光致发光、光调制反射和软X射线光谱测量确定InN的室温带隙为0.67 ± 0.05 eV。给出了InN中电子有效质量的实验测量结果，并解释了窄禁带中k · p相互作用引起的非抛物线导带.高能粒子辐照被证明是一种有效的方法来控制电子浓度，n，在未掺杂的氮化铟。光学研究表明，辐照InN的吸收边的大Burstein-Moss位移随着n的增加。对InN中缺陷能级和电子输运的基础研究也作了评述。最后，目前的实验证据的p型活性在Mg掺杂InN的评价。
The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 × 1018 cm−3 and mobilities exceeding 2000 cm2 (Vs)−1. Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein–Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated.