Controlled nitrogen incorporation in GaNSb alloys
Controlled nitrogen incorporation in GaNSb alloys
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DOI：
10.1063/1.3643259
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发表时间：
2011-09
期刊：
影响因子：
1.6
通讯作者：
M. Ashwin;T. Veal;J. J. Bomphrey-J.;I. Dunn;D. Walker;P. Thomas;T. Jones
中科院分区：
文献类型：
--
作者：
M. Ashwin;T. Veal;J. J. Bomphrey-J.;I. Dunn;D. Walker;P. Thomas;T. Jones
在分子束外延GaNxSb 1 −x合金（x = 0.022）中，N的掺入是温度（325-400°C）和生长速率（0.25-1.6 μmh−1）的函数。在固定的生长速率下，掺入的N分数随着温度的降低而增加，直到达到特定生长速率的最大N含量。在每一个温度下，有一个范围内的增长率，其中的N含量是成反比的增长率;的结果被理解的动力学模型。系统的生长速率和温度依赖性使得N含量和所产生的带隙能够被控制。
The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled.