Effect of Bandgap Narrowing on Performance of Modern Power Devices
Effect of Bandgap Narrowing on Performance of Modern Power Devices
复制标题
带隙窄化对现代功率器件性能的影响
DOI：
--
复制
发表时间：
2013
影响因子：
3.1
通讯作者：
F. Udrea
中科院分区：
文献类型：
--
作者：
G. Camuso;E. Napoli;V. Pathirana;N. Udugampola;A. P. Hsieh;T. Trajkovic;F. Udrea
本文详细研究了带隙窄化效应对功率器件性能的影响。分析表明，BGN引起的能带结构的变化可以强烈地影响双极器件的电导调制，从而导致完全不同的性能。这是由于在高水平喷射条件下喷射效率的改变。通过对p-n结注入效率的综合分析，建立了该现象的解析模型。BGN模型的调整已被证明是必不可少的，在准确预测的横向绝缘栅双极晶体管（IGBT）的性能。其他器件（如p-i-n二极管或穿通IGBT）受到BGN的显著影响，而其他器件（如场截止IGBT或功率MOSFET）仅受到轻微影响。
The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected.