Switching rate of magnetoresistive random access memory element: Verifying transition state theory
Switching rate of magnetoresistive random access memory element: Verifying transition state theory
复制标题
磁阻随机存取存储器元件的开关速率：验证过渡态理论
DOI：
10.1063/1.2176868
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发表时间：
2006
影响因子：
3.2
通讯作者：
P. Visscher
中科院分区：
文献类型：
--
作者：
Shuxia Wang;P. Visscher
在本文中，我们表明，“过渡态理论”（TST）中使用的化学速率理论的工作令人惊讶的磁性系统。它不适用于最简单的情况（单轴各向异性），这可以解释为什么它以前没有被应用到其他情况下，如薄膜开关。为了检查TST，我们开发了一种通过Landau-Lifshitz模拟定义和计算开关速率的方法，并将其应用于特定系统（薄膜磁阻随机存取存储器元件），并给出与TST类似的结果。
In this paper we show that the “transition state theory” (TST) used in chemical rate theory works surprisingly well for magnetic systems. It does not work for the simplest case (uniaxial anisotropy), which may explain why it has not previously been applied to other cases such as thin film switching. To check the TST, we develop a method for defining and computing switching rates by Landau-Lifshitz simulation, and apply it to a specific system (thin-film magnetoresistive random access memory element) for which it gives results similar to the TST.