Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia
Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia
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Ga2O3薄膜与氨反应合成GaN纳米线
DOI：
10.1016/j.matlet.2006.11.038
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发表时间：
2007
影响因子：
3
通讯作者：
Jinhua Chen
中科院分区：
文献类型：
--
作者：
Yujie Ai;C. Xue;Chuanwei Sun;Lili Sun;H. Zhuang;Fuxue Wang;H. Li;Jinhua Chen
在Si（111）衬底上沉积Ti层，在950 °C下氨化Ga 2 O3薄膜制备GaN纳米线。采用X射线衍射（XRD）、扫描电子显微镜（SEM）、傅立叶变换红外光谱（FTIR）和高分辨透射电子显微镜（HRTEM）对产物进行了表征。XRD、FTIR和HRTEM研究表明，这些纳米线是六方GaN单晶。SEM观察表明，GaN纳米棒的直径在50 nm ~ 100 nm之间，长度可达几微米，在衬底上相互干涉。
GaN nanowires were synthesized by ammoniating Ga2O3films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.