Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets
Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets
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DOI：
10.1016/j.jcrysgro.2010.02.035
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发表时间：
2010-05
影响因子：
1.8
通讯作者：
W. Feng;V. Kuryatkov;S. Nikishin;M. Holtz
中科院分区：
文献类型：
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作者：
W. Feng;V. Kuryatkov;S. Nikishin;M. Holtz
