Single-crystal growth of Tl2Ru2O7 pyrochlore using high-pressure and flux method
Single-crystal growth of Tl2Ru2O7 pyrochlore using high-pressure and flux method
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DOI：
10.1016/j.jssc.2005.12.017
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发表时间：
2006-03-01
影响因子：
3.3
通讯作者：
Ishizawa, N
中科院分区：
文献类型：
--
作者：
Mori, D;Sonoyama, N;Ishizawa, N
用通量法在高氧压力下生长了焦绿铊钌单晶。采用原位粉末x射线衍射（XRD）法在高压和高温下直接观察了生长条件。在1350℃的NaCl-KCl助熔剂和1150℃的B2O3助熔剂下生长，NaCl-KCl助熔剂的生长温度高达1350℃，导致坩埚中Pt污染和晶体缺氧。利用B2O3助熔剂在较低温度下进行晶粒生长，材料通过B2O3转移。采用单晶XRD方法对所得晶体进行了表征，发现其化学计量成分为Tl2Ru2O7-delta (δ = 0)，在120k左右发生结构相变。B2O3晶粒生长技术在高温高压下生长单晶是有效的。(C) 2005爱思唯尔公司版权所有。
Single crystals of the thallium ruthenium pyrochlore have been grown by flux method under high oxygen pressure. The growth conditions were determined by direct observations using in situ powder X-ray diffraction (XRD) method under high pressure and high temperature. The crystals were grown using NaCl-KCl flux at 1350 degrees C and B2O3 flux at 1150 degrees C. High growth temperature of 1350 degrees C for the NaCl-KCl flux caused Pt contamination from the crucible and oxygen deficiency for the crystals obtained. The crystal growth using B2O3 flux proceeded at lower temperature by grain growth with material transfer through B2O3. The crystal obtained was characterized by single-crystal XRD method, and was found to have a stoichiometric composition, Tl2Ru2O7-delta (delta = 0), with a structural phase transition around 120 K. The grain growth technique with B2O3 is efficient for high-temperature single-crystal growth under high pressure. (C) 2005 Elsevier Inc. All rights reserved.